Proposed Concept of Extending 8x8 4t1d Non-Volatile Dram Cell in 0.18 μm Technology

DRAM is widely used as main memory storage in contemporary computer systems. As VLSI process technology advances, more transistors can be integrated in a single chip leading to higher storage capacity. Basic DRAMs are volatile memory. The volatile DRAMs are made into a non-volatile one by adding an extra transistor and a resistor (1T1R) along with the core. The performance comparison of volatile as well as proposed non-volatile cell is examined. Comparison of different DRAM cells is done. Considerations on delay, the power dissipated and overall area is made here. The NVDRAM (4T1D) cell is used as the core cell. The project also dealt with basic memory architecture. The CMOS memory design includes sense amplifiers, row and column decoders and finally the operating memory cells themselves. The 8x8 non-volatile 4T1D DRAM cell is then proposed and implemented. And their performances is examined. The schematic entry was done using Mentor Graphics Design architect and simulations are done using Mentor Graphics Eldo. The simulation results obtained with TSMC 180nm process technology at 1.8V.